Abstract In this study. by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode. we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p++-Si by a physical vapor deposition process. in which the filament growth and rupture can be efficiently controlled during analog switching. https://fitnessgravesyardes.shop/product-category/grip-right/